DatasheetsPDF.com

QM600HD-M

Mitsubishi Electric Semiconductor
Part Number QM600HD-M
Manufacturer Mitsubishi Electric Semiconductor
Description Transistor
Published Apr 16, 2005
Detailed Description MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M • • • • IC Collector c...
Datasheet PDF File QM600HD-M PDF File

QM600HD-M
QM600HD-M

Overview
MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M • • • • IC Collector current .
.
.
.
600A VCEX Collector-emitter voltage .
350V hFE DC current gain.
.
.
.
500 Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 φ5.
5 C B 20 E E 48 22 62 8 B 14 BX 12 17 E E BX 22 25 M4 64 M6 8 5.
5 21 LABEL 25 27 Feb.
1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted)...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)