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QSE243

Fairchild Semiconductor
Part Number QSE243
Manufacturer Fairchild Semiconductor
Description LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR
Published Apr 16, 2005
Detailed Description LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) R 0....
Datasheet PDF File QSE243 PDF File

QSE243
QSE243

Overview
LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.
060 (1.
50) 0.
174 (4.
44) R 0.
030 (0.
76) 0.
047 (1.
20) 0.
224 (5.
71) 0.
177 (4.
51) 0.
030 (0.
76) 0.
5 (12.
7) MIN @; ; @ SCHEMATIC Collector Emitter EMITTER 0.
060 (1.
52) 0.
020 (0.
51) SQ.
(2X) 0.
100 (2.
54) NOTES: 1.
Dimensions for all drawings are in inches (millimeters).
2.
Tolerance of ± .
010 (.
25) on all non nominal dimensions unless otherwise specified.
DESCRIPTION The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package.
FEATURES • NPN Silicon Phototransistor with internal base-emitter resistance • Package Type: Sidelooker • Medium Reception Angle, 50° • Clear Plastic Package • Matching Emitter: QEE213  2001 Fairchild Semiconductor Corporation DS300288 9/20/01 1 OF 3 www.
fairchildsemi.
com LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW ELECTRICAL / OPTICAL CHARACTERISTICS Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Saturation Voltage Rise Time Fall Time Light Current Slope(6) Knee Point(5,7) VCE = 15 V, Ee = 0 IC = 100 µA Ee = 1 mW/cm2 IC = 0.
1 mA(5) VCC = 5 V, RL = 1000 V IC = 1 mA VCE = 5 V, Ee1 = 1 mW/cm2 Ee2 = 0.
5 mW/cm2(5) VCE = 5 V (5) (TA =25°C) Symbol DPS 0 ID BVCEO VCE (sat) tr tf ILS Eek Min — — — 30 — — — 1.
0 0.
125 Typ 880 ±25 — — — 15 15 Max — — 100 — 0.
4 — — Units nm Deg.
nA V V µs µs mA/mW/cm2 mW/cm2 Test Conditions NOTES 1.
Derate power dissipation linearly 1.
33 mW/°C above 25°C.
2.
RMA flux is reco...


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