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Q62702-B0854

Siemens Semiconductor Group
Part Number Q62702-B0854
Manufacturer Siemens Semiconductor Group
Description Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
Published Apr 16, 2005
Detailed Description BB 659 Silicon Tuning Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance...
Datasheet PDF File Q62702-B0854 PDF File

Q62702-B0854
Q62702-B0854

Overview
BB 659 Silicon Tuning Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 659 BB 659 Marking Ordering Code D D Q62702-B0875 unmatched Q62702-B0854 inline matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 .
.
.
+150 -55 .
.
.
+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-28-1998 1998-11-01 BB 659 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current typ.
max.
10 100 Unit IR IR - nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 36 27.
5 2.
5 2.
4 38.
3 30.
1 2.
89 2.
6 10.
4 14.
7 40 32 3.
2 2.
9 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.
8 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.
5 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) % 0.
3 0.
4 0.
65 0.
6 1 2 0.
7 Ω nH VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence Series resistance rs Ls - VR = 5 V, f = 470 MHz Series inductance 1) In-line matching.
For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-28-1998 1998-11-01 BB 659 Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 40 pF 1/°C CT 30 T Cc 25 10 -4 20 15 10 5 10 -5 0 10 0 0 5 10 15 20 V 30 10 1 V 10 2 VR VR Reverse current I R = f (VR) T A = Parameter 10 3 pA 85°C Reverse current IR = f (TA) VR = 28V 10 3 pA IR 10 2 IR 10 2 25°C 10 1 10 1 10 0 10 -1 0 ...


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