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Q62702-C2496

Siemens Semiconductor Group
Part Number Q62702-C2496
Manufacturer Siemens Semiconductor Group
Description NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)
Published Apr 16, 2005
Detailed Description BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (...
Datasheet PDF File Q62702-C2496 PDF File

Q62702-C2496
Q62702-C2496

Overview
BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.
2kΩ, R2 = 47kΩ Tape loading orientation Type BCR 48PN Marking Ordering Code Pin Configuration WTs Package Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage DC collector current DC collector current Input on voltage Input on voltage Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 50 50 10 5 70 100 50 10 250 150 - 65 .
.
.
+ 150 ≤ 275 ≤ 140 Unit V VCEO VCBO NPN PNP NPN PNP NPN PNP VEBO VEBO IC IC Vi(on) Vi(on) Ptot Tj Tstg RthJA RthJS 0.
5cm2 Cu mA V mW °C Total power dissipation, TS = 115°C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / Semiconductor Group 1 Dec-09-1996 BCR 48PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics for NPN Type Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 50 47 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 100 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 mV 0.
3 V 0.
8 1.
5 3 62 1.
1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) Vi(on) 1 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics for NPN Type Transition frequency R1 R1/R2 fT 32 0.
9 MHz 100 3 pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Dec-09-1996 BCR 48PN Electrical Cha...


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