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IS42S16100

Integrated Silicon Solution
Part Number IS42S16100
Manufacturer Integrated Silicon Solution
Description 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
Published Apr 16, 2005
Detailed Description IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequenc...
Datasheet PDF File IS42S16100 PDF File

IS42S16100
IS42S16100

Overview
IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.
3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Packages 400-mil 50-pin TSOP-II and 60-ball BGA • Lead-free package option • Available in Industrial Temperature DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288...


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