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UHBS60-2

Advanced Semiconductor
Part Number UHBS60-2
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description UHBS60-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-2 is Designed for FEATURES: • • • Omnigold™ Metal...
Datasheet PDF File UHBS60-2 PDF File

UHBS60-2
UHBS60-2

Overview
UHBS60-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-2 is Designed for FEATURES: • • • Omnigold™ Metalization System PACKAGE STYLE .
230 6L FLG A .
040x45° 4X .
025 R .
115 .
430 D E C B 2XØ.
130 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O .
125 G H I F 9.
0 A 50 V 26 V 50 V 4.
0 V 190 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.
9 C/W O O O O DIM A B C D E F G H I J K L J K L MINIMUM inches / mm MAXIMUM inches / mm .
355 / 9.
02 .
115 / 2.
92 .
075 / 1.
91 .
225 / 5.
72 .
090 / 2.
29 .
720 / 18.
29 .
970 / 24.
64 .
355 / 9.
02 .
004 / 0.
10 .
120 / 3.
05 .
160 / 4.
06 .
230 / 5.
84 .
365 / 9.
27 .
125 / 3.
18 .
085 / 2.
16 .
235 / 5.
97 .
110 / 2.
79 .
730 / 18.
54 .
980 / 24.
89 .
365 / 9.
27 .
006 / 0.
15 .
130 / 3.
30 .
180 / 4.
57 .
260 / 6.
60 ORDER CODE: ASI10673 TC = 25 C O CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 20 V VCB = 30 V NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 50 26 3.
0 10 5 UNITS V V V V mA mA --pF dB % VCE = 5.
0 V VCB = 24 V VCE = 24 V IC = 1.
0 A f = 1.
0 MHz POUT = 60 W f = 960 GHz 20 100 75 7.
0 50 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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