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UPA572T

NEC
Part Number UPA572T
Manufacturer NEC
Description N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING
Published Apr 17, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a su...
Datasheet PDF File UPA572T PDF File

UPA572T
UPA572T

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a super-mini-mold device provided with two MOS FET circuits.
It achieves high-density mounting and saves mounting costs.
PACKAGE DIMENSIONS (in millimeters) 0.
2 +0.
1 –0 0.
15 +0.
1 –0.
05 FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by 3 V power supply • Automatic mounting supported 0.
65 1.
3 2.
0 ±0.
2 0.
65 1.
25 ±0.
1 2.
1 ±0.
1 0 to 0.
1 0.
7 0.
9 ±0.
1 EQUIVALENT CIRCUIT 5 4 PIN CONNECTION 1.
Gate 1 (G1) 2.
Source (common) 3.
Gate 2 (G2) 4.
Drain 2 (D2) 5.
Drain 1 (D1) Marking: DB 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg PW ≤ 10 ms, Duty Cycle ≤ 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATINGS 30 ±7 ± 100 ± 200 200 (Total) 150 –55 to +80 –55 to +150 UNIT V V mA mA mW ˚C ˚C ˚C Document No.
G11244EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA572T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 5 V, ID = 10 mA, VGS(on) = 5 V, RG = 10 Ω, RL = 500 Ω TEST CONDITIONS VDS = 30 V, VGS = 0 VGS = ± 5 V, VDS = 0 VDS = 3 V, ID = 10 µA VDS = 3 V, ID = 10 mA VGS = 2.
5 V, ID = 1 mA VGS = 4.
0 V, ID = 10 mA VDS = 5.
0 V, VGS = 0, f = 1 MHz 0.
8 20 1.
0 50 7 5 16 14 2 15 20 100 100 13 8 MIN.
TYP.
MAX.
1.
0 ± 3.
0 1.
5 UNIT µA µA V mS Ω Ω pF pF pF ns ns ns ns SWITCHING TIME MEASUREMEN...


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