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VTP3310LA

PerkinElmer Optoelectronics
Part Number VTP3310LA
Manufacturer PerkinElmer Optoelectronics
Description VTP Process Photodiodes
Published Apr 17, 2005
Detailed Description VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodio...
Datasheet PDF File VTP3310LA PDF File

VTP3310LA
VTP3310LA

Overview
VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package.
These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 50A LONG T-1 CHIP ACTIVE AREA: .
0011 in2 (0.
684 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP3310LA SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.
- 50% Resp.
Pt.
Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min.
H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 1...


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