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ZXT14P20DX

Zetex Semiconductors
Part Number ZXT14P20DX
Manufacturer Zetex Semiconductors
Description 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
Published Apr 17, 2005
Detailed Description ZXT14P20DX SuperSOT4™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 20m ; IC= -5A DESCRI...
Datasheet PDF File ZXT14P20DX PDF File

ZXT14P20DX
ZXT14P20DX

Overview
ZXT14P20DX SuperSOT4™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 20m ; IC= -5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.
This makes it ideal for high efficiency, low voltage switching applications.
MSOP8 FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=5A Continuous Collector Current MSOP8 package C B APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control E E C C C C E 2 DEVICE ZXT14P20DXTA ZXT14P20DXTC DEVICE MARKING T14P20DX REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units E B 3 Top View 4000 units ISSUE 1 - MARCH 2000 1 4 5 6 7 ORDERING INFORMATION 1 8 ZXT14P20DX ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT -25 -20 -7.
5 -25 -5 -500 1.
1 8.
8 1.
8 14.
4 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 113 70 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
Refer to Transient Thermal Impedance graph.
ISSUE 1 - MARCH 2000 2 ZXT14P20DX CHARACTERISTICS ISSUE 1 - MARCH 2000 3 ZXT14P20DX ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless other...


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