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APT1001R1AVR

Advanced Power Technology
Part Number APT1001R1AVR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode ...
Datasheet PDF File APT1001R1AVR PDF File

APT1001R1AVR
APT1001R1AVR

Overview
APT1001R1AVR 1000V 9A 1.
100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-3 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-3 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT1001R1AVR UNIT Volts Amps 1000 9 36 ±30 ±40 200 1.
6 -55 to 150 3...


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