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APT10026JN

Advanced Power Technology
Part Number APT10026JN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D S G D S G S SO 2 T- 27 APT10026JN 1000V 33A 0.26Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ®...
Datasheet PDF File APT10026JN PDF File

APT10026JN
APT10026JN

Overview
D S G D S G S SO 2 T- 27 APT10026JN 1000V 33A 0.
26Ω "UL Recognized" File No.
E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor 1 SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified.
APT 10026JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 33 132 ± 30 690 5.
52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/°C °C Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 S...


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