DatasheetsPDF.com

APT1002RCN

Advanced Power Technology
Part Number APT1002RCN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D TO-254 G S APT1002RCN 1000V 5.5A 2.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
Datasheet PDF File APT1002RCN PDF File

APT1002RCN
APT1002RCN

Overview
D TO-254 G S APT1002RCN 1000V 5.
5A 2.
00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.
APT1002RCN UNIT Volts Amps 1000 5.
5 22 ±30 150 1.
2 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 5.
5 2.
00 250 1000 ±100 2 (VDS > ID(ON) x R DS(ON) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID [Cont.
]) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.
0mA) 4 SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions VDS = 0.
4 VDSS, IDS = PD / 0.
4 VDSS, t = 1 Sec.
IDS = ID [Cont.
], VDS = PD / ID [Cont.
], t = 1 Sec.
MIN TYP MAX UNIT Watts 150 150 5.
5 Amps 050-0015 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
USA 405 S.
W.
Columbia Street APT Website - http://www.
advancedpower.
com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.
F.
Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Drain-to-Case Capacitance...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)