DatasheetsPDF.com

APT1004R2BN

Advanced Power Technology
Part Number APT1004R2BN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D TO-247 G S APT1004RBN ® 1000V 4.4A 4.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
Datasheet PDF File APT1004R2BN PDF File

APT1004R2BN
APT1004R2BN

Overview
D TO-247 G S APT1004RBN ® 1000V 4.
4A 4.
00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1004R2BN 1000V 4.
0A 4.
20Ω All Ratings: TC = 25°C unless otherwise specified.
APT 1004RBN APT 1004R2BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 4.
4 17.
6 ± 30 180 1.
44 1000 4.
0 16 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN APT1004RBN APT1004R2BN APT1004RBN APT1004R2BN APT1004RBN APT1004R2BN TYP MAX UNIT Volts 1000 1000 4.
4 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-Stat...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)