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APT1201R2SLL

Advanced Power Technology
Part Number APT1201R2SLL
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N...
Datasheet PDF File APT1201R2SLL PDF File

APT1201R2SLL
APT1201R2SLL

Overview
APT1201R2BLL APT1201R2SLL 1200V 12A 1.
200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg.
Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage BLL D3PAK TO-247 SLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25°C unless otherwise specified.
APT1201R2 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD INF 1200 12 48 ±30 ±40 400 3.
20 300 12 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ -55 to 150 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1200 12 1.
20 100 500 3 5 ±100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA 8-2001 050-7107 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) nA Volts CAUTION: These Devices are Sensit...


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