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APT20M11JVFR

Advanced Power Technology
Part Number APT20M11JVFR
Manufacturer Advanced Power Technology
Description N-Channel MOSFET
Published Apr 23, 2005
Detailed Description APT20M11JVFR 200V 175A S G D 0.011Ω S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Chann...
Datasheet PDF File APT20M11JVFR PDF File

APT20M11JVFR
APT20M11JVFR

Overview
APT20M11JVFR 200V 175A S G D 0.
011Ω S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO ISOTOP® 2 T- 27 • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested FREDFET D G S • Popular SOT-227 Package All Ratings: TC = 25°C unless otherwise specified.
APT20M11JVFR UNIT Volts Amps 200 175 700 ±30 ±40 700 5.
6 -55 to 150 300 175 50 4 1 Continuous Drain Current @ T C = 25° C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25° C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case fo...


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