DatasheetsPDF.com

APT20M16LLL

Advanced Power Technology
Part Number APT20M16LLL
Manufacturer Advanced Power Technology
Description N-Channel MOSFET
Published Apr 23, 2005
Detailed Description APT20M16B2LL APT20M16LLL 200V 100A 0.016W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltag...
Datasheet PDF File APT20M16LLL PDF File

APT20M16LLL
APT20M16LLL

Overview
APT20M16B2LL APT20M16LLL 200V 100A 0.
016W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg.
Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage T-MAX™ TO-264 LLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified.
APT20M16 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 5 200 100 400 ±30 ±40 690 Volts Watts W/°C °C Amps mJ 5.
52 300 100 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 200 100 0.
016 100 500 ±100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 050-7014 Rev A 8-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) CAUTION: These Devices are ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)