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APT30M75BLL

Advanced Power Technology
Part Number APT30M75BLL
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT30M75BLL APT30M75SLL 300V 44A 0.075Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high v...
Datasheet PDF File APT30M75BLL PDF File

APT30M75BLL
APT30M75BLL

Overview
APT30M75BLL APT30M75SLL 300V 44A 0.
075Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering R and Qg.
Power MOS 7® combines lower conduction and switching DS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
TO-247 • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D3PAK SLL D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT30M75 300 44 176 ±30 ±40 329 2.
63 -55 to 150 300 44 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 44 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 22A) IDSS Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 0.
075 100 500 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
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