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APT33GF120B2RD

Part Number	APT33GF120B2RD
Manufacturer	Advanced Power Technology
Description	The Fast IGBT is a new generation of high voltage power IGBTs.
Published	Apr 23, 2005
Detailed Description	APT33GF120B2RD APT33GF120LRD 1200V APT33GF120B2RD 52A TO-264 (LRD) Fast IGBT & FRED The Fast IGBT™ is a new generation...
Datasheet	APT33GF120B2RD PDF File

Overview

APT33GF120B2RD APT33GF120LRD 1200V APT33GF120B2RD 52A TO-264 (LRD) Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs.
Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
G T-Max™ (B2RD) • Low Forward Voltage Drop • High Freq.
Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E C C E APT33GF120LRD G E APT33GF120B2RD/LRD UNIT All Ratings: TC = 25°C unless otherwise specified.
1200 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 1200 ±20 52 33 104 66 300 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C @ TC = 90°C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.
5mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) 2 2 PR EL I Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
M TYP MAX UNIT 1200 4.
5 5.
5 2.
7 3.
3 6.
5 3.
2 3.
9 0.
5 5.
0 ±100 mA nA Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
USA 405 S.
W.
Columbia Street APT Website - http://www.
advancedpower.
com...

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APT33GF120B2RD The Fast IGBT is a new generation of high voltage power IGBTs. - Advanced Power Technology

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