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APT5017BVFR

Advanced Power Technology
Part Number APT5017BVFR
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT5017BVFR 500V 30A 0.170Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel e...
Datasheet PDF File APT5017BVFR PDF File

APT5017BVFR
APT5017BVFR

Overview
APT5017BVFR 500V 30A 0.
170Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested • Popular TO-247 Package G FREDFET D S All Ratings: TC = 25°C unless otherwise specified.
APT5017BVFR UNIT Volts Amps 500 30 120 ±30 ±40 370 2.
96 -55 to 150 300 30 30 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Vo...


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