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HYB5117805BJ-60

Siemens
Part Number HYB5117805BJ-60
Manufacturer Siemens
Description 2M x 8 - Bit Dynamic RAM 2k Refresh
Published Apr 23, 2005
Detailed Description 2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO) Advanced Information • • • HYB5117805BSJ -50/-60/-70 2 097 ...
Datasheet PDF File HYB5117805BJ-60 PDF File

HYB5117805BJ-60
HYB5117805BJ-60

Overview
2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO) Advanced Information • • • HYB5117805BSJ -50/-60/-70 2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • Single + 5 V (± 10 %) supply Low power dissipation max.
660 mW active (-50 version) max.
605 mW active (-60 version) max.
550 mW active (-70 version) 11 mW standby (TTL) 5.
5.
mW standby (MOS) Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode Hyper page mode (EDO) capability All inputs, outputs and clocks fully TTL-compatible 2048 refresh cycles / 32 ms (2k-Refresh) Plastic Package: P-SOJ-28-3 400 mil • • • • • Semiconductor Group 1 1.
96 HYB5117805BSJ-50/-60/-70 2M x 8-EDO DRAM The HYB 5117805BSJ is a 16 MBit...


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