MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPNtransistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 →COM COMMON
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta = –20 to +75°C)
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM OUTPUT
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
10. 5K INPUT
5K 3K GND The seven circuits share the COM and GND.
FUNCTION The M54526P and M54526FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10. 5k Ω between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum. The M54526FP is enclosed in a molded small flat package, enabling space-saving design.
The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions Output, H Current per circuit output, L
Ratings –0. 5 ~ +50 500 –0. 5 ~ +30 500
Unit V mA V mA V W °C °C
Aug. 1999
Clamping diode forward c...
M54526P PDF File
