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K4E640812B

Samsung
Part Number K4E640812B
Manufacturer Samsung
Description 8M x 8bit CMOS Dynamic RAM
Published Apr 25, 2005
Detailed Description K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,3...
Datasheet PDF File K4E640812B PDF File

K4E640812B
K4E640812B

Overview
K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES • Part Identification - K4E660812B-JC/L(3.
3V, 8K Ref.
, SOJ) - K4E640812B-JC/L(3.
3V, 4K Ref.
, SOJ) - K4E660812B-TC/L(3.
3V, 8K Ref.
, TSOP) - K4E640812B-TC/L(3.
3V, 4K Ref.
, TSOP) • Extended Data Out Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden...


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