DatasheetsPDF.com

K4M511633E-F1L

Part Number	K4M511633E-F1L
Manufacturer	Samsung
Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Published	Apr 25, 2005
Detailed Description	K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compat...
Datasheet	K4M511633E-F1L PDF File

Overview

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.
0V or 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 1 /CS Support.
• 2chips DDP 54Balls FBGA with 0.
8mm ball pitch ( -YXXX : Leaded, -PXXX : Lead Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG...

Similar Datasheet

K4M511633E-F1H 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung
K4M511633E-F1L 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung
K4M511633E-F75 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)