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K4M513233E-MEC

Samsung
Part Number K4M513233E-MEC
Manufacturer Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Published Apr 25, 2005
Detailed Description K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compati...
Datasheet PDF File K4M513233E-MEC PDF File

K4M513233E-MEC
K4M513233E-MEC

Overview
K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 2Chips DDP 90Balls FBGA with 0.
8mm ball pitch ( -MXXX : Leaded, -EXXX : Lead Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performanc...


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