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LAE4002S

Philipss
Part Number LAE4002S
Manufacturer Philipss
Description NPN microwave power transistor
Published Apr 25, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of Jun...
Datasheet PDF File LAE4002S PDF File

LAE4002S
LAE4002S

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile • Excellent performance and reliability.
APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid.
A miniature ceramic enc...


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