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LD261

Siemens Group
Part Number LD261
Manufacturer Siemens Group
Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Published Apr 25, 2005
Detailed Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 ...
Datasheet PDF File LD261 PDF File

LD261
LD261

Overview
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.
4 2.
1 1.
9 1.
7 0.
5 0.
4 2.
7 2.
5 0.
25 0.
15 0.
7 0.
6 0 .
.
.
5 0.
4 A A Radiant sensitive area (0.
4 x 0.
4) 1.
4 1.
0 Collector (BPX 81) Cathode (LD 261) 2.
1 1.
5 2.
54 mm spacing 3.
5 3.
0 3.
6 3.
2 1) Detaching area for tools, flash not true to size.
Approx.
weight 0.
03 g GEO06021 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q GaAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlässigkeit q Gruppiert lieferbar q Gehäusegleich mit BPX 81 Anwendungen q Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/Steuern/Regeln” Features q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81 Applications q Miniature photointerrupters q Punched tape readers q Industrial electronics q For control and...


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