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M29W400DT

ST Microelectronics
Part Number M29W400DT
Manufacturer ST Microelectronics
Description 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY...
Datasheet PDF File M29W400DT PDF File

M29W400DT
M29W400DT

Overview
M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase and Read s s Figure 1.
Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks SO44 (M) s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend TSOP48 (N) 12 x 20mm s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby s FBGA s TFBGA48 (ZA) 6 x 9mm s 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W400DT: 00EEh – Bottom Device Code M29W400DB: 00EFh s February 2003 This is preliminary information on a new product now in devel...


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