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M58CR032C

ST Microelectronics
Part Number M58CR032C
Manufacturer ST Microelectronics
Description 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s ...
Datasheet PDF File M58CR032C PDF File

M58CR032C
M58CR032C

Overview
M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.
8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.
65V to 2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers s Figure 1.
Packages – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 85, 100, 120 ns FBGA s PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word programming option TFBGA56 (ZB) 6.
5 x 10 mm s MEMORY BLOCKS – Dual Bank Memory Array: 8/24 Mbit – Parameter Blocks (Top or Bottom location) s DUAL OPERATIONS – Read in one Bank while Program or Erase in other – No delay between Read and Write operations s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58CR032C: 88C8h – Bottom Device Code, M58CR032D: 88C9h s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 64 bit user programmable OTP cells – 64 bit unique device identifier – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK September 2002 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
1/63 M58CR032C, M58CR032D TABLE OF CONTENTS SUMMARY DESCRIPTION .
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6 Figure 2.
Logic Diagram .
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7 Table 1.
Signal Names .
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7 Figure 3.
TFBGA Connections (Top view through package) .
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8 Table 2.
Bank Architecture .
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