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M58MR016C

ST Microelectronics
Part Number M58MR016C
Manufacturer ST Microelectronics
Description 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58MR016C M58MR016D 16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOL...
Datasheet PDF File M58MR016C PDF File

M58MR016C
M58MR016C

Overview
M58MR016C M58MR016D 16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.
8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = VDDQ = 1.
7V to 2.
0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 40MHz – Page mode Read (4 Words Page) – Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 4/12 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Logic Diagram VDD VDDQ VPP 4 A16-A19 ADQ0-ADQ15 W E G RP WP L K M58MR016C M58MR016D BINV WAIT 16 s DUAL O...


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