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M5M29GT161BWG

Part Number	M5M29GT161BWG
Manufacturer	Mitsubishi
Description	16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
Published	Apr 26, 2005
Detailed Description	MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRI...
Datasheet	M5M29GT161BWG PDF File

Overview

MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.
3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.
3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature.
The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank.
This BGO feature is suitable for mobile and personal computing, and communication products.
The M5M29GB/T161BWG are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for...

Similar Datasheet

M5M29GT161BWG 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY - Mitsubishi

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