Wireless Bipolar Power Transistor/ 4W 1.78 - 1.90 GHz
Description
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Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization ...
