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MA2Z376

Panasonic
Part Number MA2Z376
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Variable Capacitance Diodes MA2Z376 (MA376) Silicon epitaxial planar type Unit: mm For VCO of UHF band radio s Feature...
Datasheet PDF File MA2Z376 PDF File

MA2Z376
MA2Z376

Overview
Variable Capacitance Diodes MA2Z376 (MA376) Silicon epitaxial planar type Unit: mm For VCO of UHF band radio s Features • Small series resistance rD • S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.
30+0.
10 –0.
05 2 1.
7±0.
10 2.
5±0.
2 1 1.
25±0.
10 5˚ s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 7˚ (0.
4) 0.
16 +0.
10 –0.
06 0.
00±0.
05 0.
90±0.
15 0.
9±0.
1 1: Anode 2: Cathode SMini2-G1 Package Marking Symbol: 7C s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Series resistance * Symbol IR CD(1V) CD(3V) rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.
00 6.
80 Conditions Min Typ Max 10 16.
00 8.
90 0.
3 Ω Unit nA pF Note) 1.
Rated input/output frequency: 470 MHz 2.
* : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002 SKD00041BED (0.
4) 1 MA2Z376 I F  VF 120 100 CD  VR f = 1 MHz Ta = 25°C 1.
04 CD  Ta f = 1 MHz VR = 1 V 3V 100 50 1.
03 Diode capacitance CD (pF) Forward current IF (mA) 30 60 25°C −40°C 10 CD (Ta) CD (Ta = 25°C) 0 4 8 12 16 20 24 28 32 36 40 80 Ta = 60°C 20 1.
02 1.
01 40 5 3 2 1.
00 20 0.
99 0 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1 0.
98 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  T a 10 VR = 6 V Reverse current IR (nA) 1 0.
1 0.
01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 SKD00041BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "...


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