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MA2ZV05

Panasonic
Part Number MA2ZV05
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Variable Capacitance Diodes MA2ZV05 Silicon epitaxial planar type Unit : mm For VCO I Features • Good linearity and la...
Datasheet PDF File MA2ZV05 PDF File

MA2ZV05
MA2ZV05

Overview
Variable Capacitance Diodes MA2ZV05 Silicon epitaxial planar type Unit : mm For VCO I Features • Good linearity and large capacitance-ratio in CD  VR relation • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package INDICATES CATHODE 0.
4 ± 0.
15 1 2 0.
4 ± 0.
15 1.
7 ± 0.
1 2.
5 ± 0.
2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 0.
9 ± 0.
1 I Absolute Maximum Ratings Ta = 25°C 0 to 0.
05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 8B I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.
5 3.
6 4.
7 0.
65 Conditions Min Typ Max 10 20.
5 4.
1 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.
16 − 0.
06 + 0.
1 0.
3 − 0.
05 + 0.
1 1.
25 ± 0.
1 1 MA2ZV05 CD  VR 100 50 f = 1 MHz Ta = 25°C 120 25°C Ta = 60°C 80 − 40°C Variable Capacitance Diodes IF  V F 1.
05 1.
04 1.
03 4V f = 1 MHz CD  Ta VR = 1 V 2V 100 Diode capacitance CD (pF) 30 20 (mA) Forward current IF 10 60 5 3 2 40 20 0.
98 0 0.
97 0 1 CD(Ta) CD(Ta = 25°C) 1.
02 1.
01 1.
00 0.
99 0 4 8 12 16 20 24 28 32 36 40 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (°C) IR  Ta 100 VR = 5 V Reverse current IR (nA) 10 1 0.
1 0.
01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 ...


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