DatasheetsPDF.com

MA3S781D

Panasonic
Part Number MA3S781D
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For high-speed switching ci...
Datasheet PDF File MA3S781D PDF File

MA3S781D
MA3S781D

Overview
Schottky Barrier Diodes (SBD) MA3S781D Silicon epitaxial planar type Unit : mm 0.
28 ± 0.
05 For high-speed switching circuits 1.
60 − 0.
03 0.
80 0.
80 0.
51 0.
51 0.
80 1.
60 ± 0.
1 0.
80 ± 0.
05 I Features • SS-mini type 3-pin package • Allowing high-density mounting • Anode common type 1 + 0.
05 3 2 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM VR VRM IF 30 30 30 20 150 110 125 −55 to +125 °C °C mA V V mA 0.
60 − 0.
03 + 0.
05 0.
44 0.
44 + 0.
05 0.
88 − 0.
03 1 : Cathode 1 3 : Anode 1 2 : Cathode 2 Anode 2 SS-Mini Type Package (3-pin) Marking Symbol: M2P Internal Connection 1 3 2 Junction temperature Storage temperature I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF 1.
5 1.
0 65 Conditions Min Typ Max 1.
0 0.
4 1.
0 Unit µA V V pF ns % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
12 − 0.
02 + 0.
05 Parameter Symbol Rating Unit 0.
28 ± 0.
05 0.
28 ± 0.
05 1 MA3S781D IF  V F 103 Schottky Barrier Diodes (SBD) VF  Ta 1.
6 1.
4 102 103 IR  VR 102 75°C 25°C Forward current IF (mA) Forward voltage VF (V) Ta = 125°C 10 − 20°C 1.
2 1.
0 0.
8 0.
6 0.
4 3 mA 0.
2 1 mA Reverse current IR (µA) Ta = 125°C 10 75°C IF = 30 mA...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)