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MA3X721E

Panasonic
Part Number MA3X721E
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm For super-high speed switchin...
Datasheet PDF File MA3X721E PDF File

MA3X721E
MA3X721E

Overview
Schottky Barrier Diodes (SBD) MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition (for the single diode) 2.
9 − 0.
05 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
25 − 0.
05 + 0.
2 0.
65 ± 0.
15 1.
9 ± 0.
2 I Features 0.
95 1 3 2 0.
95 1.
45 1.
1 − 0.
1 + 0.
2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*1 Single Double*1 Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 220 200 130 1 0.
7 150 −55 to +150 Unit V V mA mA JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) MA3X721D MA3X721E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode Single Non-repetitive peak forward surge current*2 Double*1 Junction temperature Storage temperature A °C °C Marking Symbol • MA3X721D : M3H • MA3X721E : M3F Internal Connection 1 3 2 2 1 3 Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω Conditions D Min Typ 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 E Max 50 0.
55 30 3 Unit µA V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2.
Rated input/output frequency: 1 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
16 − 0.
06 I Absolute Maximum Ratings Ta = 25°C +...


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