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MA3Z080E

Panasonic
Part Number MA3Z080E
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 0.425 1....
Datasheet PDF File MA3Z080E PDF File

MA3Z080E
MA3Z080E

Overview
Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.
1 ± 0.
1 0.
425 1.
25 ± 0.
1 0.
425 + 0.
1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package 2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.
9 ± 0.
1 1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) Storage temperature Note) * : Maximum ambient temperature during operation Marking Symbol • MA3Z080D : M1X • MA3Z080E : M1Y Internal Connection 1 3 2 D 1 3 2 E I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Sym...


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