Matched Monolithic Dual Transistor
Description
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FEATURES Low VOS (VBE Match): 40 V typ, 100 V max Low TCVOS: 0.5 V/؇ C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form PRODUCT DESCRIPTION
Matched Monolithic Dual Transistor MAT01
PIN CONNECTION TO-78 (H Suffix)
The MAT01 is a monolithic ...
Analog Devices
MAT01 PDF File
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