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PHP6N10E

NXP

PowerMOS transistor


Description
Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode...



NXP

PHP6N10E

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