Silicon N - Channel IGBT
Description
TOSHIBA IGBT Module Silicon N - Channel IGBT
MG25Q1BS11
High Power Switching Applications Motor Control Applications
MG25Q1BS11
Unit: mm
l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Collector power diss...
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