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M36WT864

ST Microelectronics
Part Number M36WT864
Manufacturer ST Microelectronics
Description 64 Mbit 4Mb x16 / Multiple Bank / Burst Flash Memory and 8 Mbit 512K x16 SRAM / Multiple Memory Product
Published May 2, 2005
Detailed Description M36WT864TF M36WT864BF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory P...
Datasheet PDF File M36WT864 PDF File

M36WT864
M36WT864

Overview
M36WT864TF M36WT864BF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = 1.
65V to 2.
2V – VDDS = VDDQF = 2.
7V to 3.
3V – VPPF = 12V for Fast Program (optional) s s s s s s s s s SRAM 8 Mbit (512K x 16 bit) EQUAL CYCLE and ACCESS TIMES: 70ns LOW STANDBY CURRENT LOW VDDS DATA RETENTION: 1.
5V TRI-STATE COMMON I/O AUTOMATIC POWER DOWN ACCESS TIME: 70, 85, 100ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36WT864TF: 8810h – Bottom Device Code, M36WT864BF: 8811h Figure 1.
Packages s FLASH MEMORY PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options FBGA s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) Stacked LFBGA96 (ZA) 8 x 14mm s DUAL OPERATIONS – Program Erase in one Bank while Read in oth...


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