N-CHANNEL MOSFET
Description
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)
IRLR/U120A
BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source...
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