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M6MGB160S4BVP

Mitsubishi
Part Number M6MGB160S4BVP
Manufacturer Mitsubishi
Description CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
Published May 6, 2005
Detailed Description MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLA...
Datasheet PDF File M6MGB160S4BVP PDF File

M6MGB160S4BVP
M6MGB160S4BVP

Overview
MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.
3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi • Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.
) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
SRAM 85ns (Max.
) • Supply voltage Vcc=2.
7 ~ 3.
6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, • Ambient temperature 3.
3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by CMOS technology for the peripheral circuit • Package : 48-pin TSOP (Type-I) , 0.
4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell.
4M-bits SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS APPLICATION technology.
Mobile communication products M6MGB/T160S4BVP...


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