DatasheetsPDF.com

M74HC4072

ST Microelectronics
Part Number M74HC4072
Manufacturer ST Microelectronics
Description DUAL 4 INPUT OR GATE
Published May 6, 2005
Detailed Description M54HC4072 M74HC4072 DUAL 4 INPUT OR GATE . . . . . . . . HIGH SPEED tPD = 9 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATI...
Datasheet PDF File M74HC4072 PDF File

M74HC4072
M74HC4072

Overview
M54HC4072 M74HC4072 DUAL 4 INPUT OR GATE .
.
.
.
.
.
.
.
HIGH SPEED tPD = 9 ns (TYP.
) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.
) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.
) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 4 mA (MIN.
) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 4072B B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC4072F1R M74HC4072M1R M74HC4072B1R M74HC4072C1R DESCRIPTION The M54/74HC4072 is a high speed CMOS DUAL 4-INPUT OR GATE fabricated in silicon gate C2MOS technology.
It has the same high speed performance of LSTTL combined with true CMOS low power consumption.
The internal circuit is composed of 3 stages including buffer output, which gives high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTIONS (top view) INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection October 1992 1/9 M54/M74HC4072 TRUTH TABLE A L H X X X B L X H X X C L X X H X D L X X X H Y L H H H H IEC LOGIC SYMBOL PIN DESCRIPTION PIN No 2, 3, 4, 5 9, 10, 11, 12 1, 13 7 14 SYMBOL 1A to 1D 2A to 2D 1Y to 2Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage SCHEMATIC CIRCUIT (Per Gate) ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK ICC IO or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.
5 to +7 -0.
5 to VCC + 0.
5 -0.
5 to VCC + 0.
5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur.
F...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)