POWER TRANSISTORS
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJE18004D2
Designer's
™ Data Sheet
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics ...
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