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NESG2101M05

Part Number	NESG2101M05
Manufacturer	NEC
Description	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
Published	May 7, 2005
Detailed Description	NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 ...
Datasheet	NESG2101M05 PDF File

Overview

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.
9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performa...

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