DatasheetsPDF.com

MMSF5N03HD

Motorola
Part Number MMSF5N03HD
Manufacturer Motorola
Description SINGLE TMOS POWER MOSFET
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF5N03HD/D Designer's ™ Data Sheet Medium Power Surf...
Datasheet PDF File MMSF5N03HD PDF File

MMSF5N03HD
MMSF5N03HD


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF5N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF5N03HD Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• • • • • • • • SINGLE TMOS POWER MOSFET 5.
0 AMPERES 30 VOLTS RDS(on) = 0.
040 OHM ™ D CASE 751–05, Style 13 SO–8 G S N–C Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO–8 Package Provided Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)