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NTE126

Part Number	NTE126
Manufacturer	NTE
Description	Germanium Mesa Transistor
Published	May 9, 2005
Detailed Description	NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage,...
Datasheet	NTE126 PDF File

Overview

NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage, VCE .
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15Vdc Collector–Base Voltage, VCB .
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15Vdc Emitter–Base Voltage, VEB .
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2.
5Vdc Total Device Dissipation (TA = +25°C), PD .
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150mW Derate above 25°C .
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2.
0mW/°C Total Device Dissipation (TC = +25°C), PD .
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300mW Derate above 25°C .
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