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NTE312

NTE
Part Number NTE312
Manufacturer NTE
Description N-Channel Silicon Junction Field Effect Transistor
Published May 9, 2005
Detailed Description NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed ...
Datasheet PDF File NTE312 PDF File

NTE312
NTE312

Overview
NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications.
The NTE312 comes in a TO–92 package.
Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross–Modulation Minimized by Square–Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Gate Voltage, VDG .
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30V Gate–Source Voltage, VGS .
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–30V Gate Current, IG .
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