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NTE317

NTE
Part Number NTE317
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor...
Datasheet PDF File NTE317 PDF File

NTE317
NTE317

Overview
NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.
5V epitaxial silicon NPN planar transistor designed primarily for HF communications.
This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.
Features: D 70W Minimum with Greater than 13.
5dB Gain D Withstands Severe Mismatch under Operating Conditions D Emitter Ballasted D Low Inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO .
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36V Collector–Emitter Voltage, VCEO .
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18V Emitter–Base Voltage, VEBO .
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4V Maximum Collector Current, IC .
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