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NTE342

NTE
Part Number NTE342
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE342 Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz) Description: The NTE342 is a silicon NPN epitaxial plane...
Datasheet PDF File NTE342 PDF File

NTE342
NTE342

Overview
NTE342 Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz) Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.
5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.
2V, PO = 6W, f = 175MHz Application: D 4 to 5 Watt Output Power Amplifiers Applications in VHF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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35V Collector–Emitter Voltage (RBE ...


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